Electrodeposition and characterization of ZnSe semiconductor thin films

Citation
G. Riveros et al., Electrodeposition and characterization of ZnSe semiconductor thin films, SOL EN MAT, 70(3), 2001, pp. 255-268
Citations number
41
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
70
Issue
3
Year of publication
2001
Pages
255 - 268
Database
ISI
SICI code
0927-0248(200112)70:3<255:EACOZS>2.0.ZU;2-L
Abstract
In this work, results on the preparation and characterization of ZnSe thin films obtained by electrodeposition are presented. Voltammetric curves were recorded in order to characterize the electrochemical behavior of the Zn+2 /SeO2 system on different substrates. Thin films were deposited potentiosta tically from an unstirred, deareated aqueous solution onto titanium, glass substrates coated with fluorine doped tin oxide and ITO glass substrates. T he effect of main parameters such as the deposition potential, SeO2 concent ration and annealing on film composition and structure were analyzed. The a s-grown and treated layers were characterized by X-ray energy dispersive an alysis, X-ray diffraction, scanning electron microscopy and photoelectroche mical studies. Optical measurements were done on these samples which gave a clear band edge near 2.6eV quite close to the accepted room temperature va lue of 2.7eV for ZnSe. (C) 2001 Elsevier Science BN. All rights reserved.