Light and voltage dependence of the junction transport properties of CdTe/CdS photovoltaics

Authors
Linam, DL Singh, VP McClure, JC Lush, GB Mathew, X Sebastian, PJ
Citation
Dl. Linam et al., Light and voltage dependence of the junction transport properties of CdTe/CdS photovoltaics, SOL EN MAT, 70(3), 2001, pp. 335-344
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
70
Issue
3
Year of publication
2001
Pages
335 - 344
Database
ISI
SICI code
0927-0248(200112)70:3<335:LAVDOT>2.0.ZU;2-4
Abstract
The J-V curve of CdTe/CdS photovoltaics does not consist of a simple superp osition of a loss current and a light generated current with a considerable loss in conversion efficiency. This paper uses capacitance/voltage measure ments and J-V measurements at a variety of temperatures and light levels to develop a model for this non-superposition. It was found that a light depe ndent tunneling mechanism dominates at low voltages. Moreover, the tunnelin g takes place from a trap level within the CdTe. (C) 2001 Published by Else vier Science B.V.