Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data

A practical and efficient approach for estimating the MOSFET device and cir cuit performance distributions is presented. The proposed method is based o n the Latin hypercube sampling technique and direct extracting and utilizin g the statistical information obtained from a population of parametric test data. Using this approach, a set of worst-case models taking into account data correlations and equal probability constraints is developed. The proce dure allows for a systematical and accurate way to predict the performance spread and worst case of MOSFET circuits, as well as a greatly reduced comp utation time for statistical simulation. Measured data of two digital circu its are included in support of the modeling work. (C) 2001 Elsevier Science Ltd. All rights reserved.