Effect of annealing on electrical properties of Pt/beta-SiC contact

The property of contacts on semiconductors, which are deposited and anneale d in high temperatures, is significantly affected by the annealing conditio n. SiC is one of the most attractive semiconductors applied in high tempera ture devices. In this study, the possibility of Pt being used as Schottky c ontact on SiC was examined by investigating the effects of annealing on the electrical properties of Pt/beta -SiC contact. The as-deposited Pt/n-type beta -SiC contacts showed ohmic property, which is attributed to the donor- like traps at the interface due to the sputtering damage. On the other hand , after annealing the contacts showed Schottky property, which seems to be originated from the annealing of traps and the movement of the junction int o the defect-free SiC film during annealing. The barrier height increased w ith increasing annealing temperature, showing 1.37 eV at the annealing temp erature of 900 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved .