Jh. Kim et Ji. Song, Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor, SOL ST ELEC, 45(9), 2001, pp. 1571-1576
Highly strained In0.5Ga0.5P/In0.33Ga0.67As and conventional In0.5Ga0.5P/In0
.22Ga0.78As pseudomorphic high electron mobility transistor (p-HEMT) struct
ures were grown on patterned and non-patterned GaAs substrates, respectivel
y, by using a compound-source molecular beam epitaxy. Microwave characteris
tics and low-frequency noise characteristics of the p-HEMTs were measured a
nd compared. The highly strained InGaP/In0.33Ga0.67As p-HEMT grown on the p
atterned substrate showed more than 20% improvements in microwave performan
ces including the transition frequency (f(T)) and the maximum oscillation f
requency (f(max)) compared with those of the conventional InGaP/In0.22Ga0.7
8As p-HEMT grown on the non-patterned substrate. The input noise spectral d
ensity and the Hooge parameter of the highly strained InGaP/In0.33Ga0.67As
p-HEMT grown on the patterned substrate were more than an order of magnitud
e lower than those of the conventional InGaP/In0.22Ga0.78As p-HEMT grown on
the non-patterned substrate. The improvements in microwave characteristics
and low-frequency noise characteristics of the highly strained InGaP/In0.3
3Ga0.67As p-HEMT are attributed to the improvement in transport property of
the highly strained In0.33Ga0.67As channel layer achieved by a patterned s
ubstrate growth. The results indicate the potential of highly strained p-HE
MTs grown on patterned substrates for use in applications requiring improve
d microwave and low phase noise characteristics. (C) 2001 Elsevier Science
Ltd. All rights reserved.