Design of single and multiple zone junction termination extension structures for SiC power devices

The design of SiC planar and non-planar junction termination extension (JTE ) structures are investigated through calibrated quasi-3D numerical simulat ion. JTE techniques are optimized with respect to breakdown voltage, area c onsumption, surface fields, and interface charge. Simulated JTE charge prof iles predict near-ideal breakdown values with surface fields less than 60% of their bulk values, and show that the critical implant activation percent age can vary as much as 40%, with only 10% reduction in breakdown voltage f or lightly doped blocking layers. These results are extended to unique mult iple-zone JTE and mesa-JTE structures applicable to a wide range of planar and non-planar SiC power devices. (C) 2001 Published by Elsevier Science Lt d.