Minority carrier transport in GaN and related materials

Authors
Chernyak, L Osinsky, A Schulte, A
Citation
L. Chernyak et al., Minority carrier transport in GaN and related materials, SOL ST ELEC, 45(9), 2001, pp. 1687-1702
Citations number
53
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
9
Year of publication
2001
Pages
1687 - 1702
Database
ISI
SICI code
0038-1101(200109)45:9<1687:MCTIGA>2.0.ZU;2-9
Abstract
Minority carrier transport properties are an indicator of AlGaN quality. Th is characteristic is particularly of significant importance for AlGaN-based bipolar devices. The goal of this review is to discuss different factors - temperature, doping level, dislocation density, electron current density - which affect minority carrier mobility, lifetime, and diffusion length, an d to relate the changes in AlGaN transport properties to the functionality of electronic and optoelectronic devices. (C) 2001 Elsevier Science Ltd. Al l rights reserved.