Behavior of Si adatoms on the Si(lll)-7x7 surface at the initial growt
h stage of metal/Si(lll) system has been investigated. The adatoms at
the 7x7 surface can be removed rather easily with relatively low energ
y barrier. The addition of the adatom to dimer-adatom-stacking fault i
s the least contributing term to the Si(lll)-7x7 reconstruction.