Citation
Ig. Shuttleworth et al., A NIXSW structural investigation of the (root 3 x root 3)R30 degrees-Cu2Sisurface alloy phase formed by SiH4 reaction with Cu(111), SURF SCI, 491(1-2), 2001, pp. L645-L650
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028
→ ACNP
Volume
491
Issue
1-2
Year of publication
2001
Pages
L645 - L650
Database
ISI
SICI code
0039-6028(20010920)491:1-2<L645:ANSIOT>2.0.ZU;2-J
Abstract
The structure of the Cu(111)-(root3 X root3)R30 degrees -Cu2Si surface allo
y has been determined using normal incidence X-ray standing wave (NIXSW) an
alysis. It comprises two equally populated, monolayer thick (root3 x root3)
R30 degrees -Cu2Si domains. In one domain the silicon and copper atoms both
reside in the fcc type threefold hollows, in the other they both reside in
the hep type threefold hollows. For both domains the silicon atoms are 2.0
4 +/- 0.04 Angstrom from the substrate Cu(111) scatterer plane. (C) 2001 El
sevier Science B.V. All rights reserved.