AFM MODIFICATION OF HYDROGEN-PASSIVATED SI(100) IN THE CONTACT MODE IN AIR

We report on the mechanical friction method for the fabrication of Si- nanostructure on the H-passivated Si(100) substrate with a contact mod e atomic force microscopy (AFM) using silicon nitride tip in air. The exposed regions by the mechanical friction between tip and sample coul d be sucessfully oxidized with ambient oxygen and withstood in a selec tive etching of unexposed regions. The width of the oxide pattern form ed by this method was nanometer scale. As the etching time and scan ra te were decreased, the degradation of pattern could be decreased produ cing an improved line shape. This study also showed that there exists a threshold tip force for the oxide line formation.