The preparation of ultra low-k zeolite films with high mechanical strength
by a simple spin-on process is demonstrated. Continuous, smooth, thin zeoli
te silicalite films with a dielectric constant of 2.1 and elastic modulus o
f 16-18 GPa are obtained by this process, which is simple and compatible wi
th the requirements of the semiconductor manufacturers. Polishing experimen
ts showed that the film is potentially compatible with chemical mechanical
polishing (CMP). The described pure silica film could be an attractive cand
idate for ultra-low-k materials for future generation microprocessors.