Bicrystalline silicon nanowires

Authors
Carim, AH Lew, KK Redwing, JM
Citation
Ah. Carim et al., Bicrystalline silicon nanowires, ADVAN MATER, 13(19), 2001, pp. 1489
Citations number
23
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
13
Issue
19
Year of publication
2001
Database
ISI
SICI code
0935-9648(20011002)13:19<1489:BSN>2.0.ZU;2-W
Abstract
The synthesis of bicrystalline silicon nanowires containing a single (111) twin boundary along the entire length of the growth axis (see Figure and al so cover) is revealed here. The wires are generally straight and contain no other defects. These unusual structures offer model systems for the study of charge and mass transport along single defects and could serve as templa tes for novel device structures.