Ion-beam-assisted growth of CoPt3 films

CoPt3 films are known to exhibit room-temperature perpendicular magnetic an isotropy when grown between 200 degreesC-400 degreesC. We have used Ar ion- beam-assisted growth of CoPt3 films in an effort to enhance the anisotropy and also lower the temperature range where it occurs. We present a systemat ic study of the dependence of magnetic properties of the films on substrate temperature during growth, ion beam energy, and ion to atom arrival ratio, R, at the substrate. We find a significant increase of the anisotropy in f ilms grown at 100 degreesC compared to the R=0 value resulting in perpendic ular anisotropy at moderate growth temperatures. At 250 degreesC and 400 de greesC, however, there is a monotonic decrease in anisotropy with R for all energies. (C) 2001 American Institute of Physics.