Switch-free read operation design and measurement of magnetic tunnel junction magnetic random access memory arrays

A switch-free read operation design and cell measurement method for magneti c tunnel junction magnetic random access memory arrays with a peripheral ci rcuitry is presented. The design effectively reduces the shunting effect an d maintains the signal at the original level even for the cases when the le ad resistance cannot be neglected. It also allowed us to measure the magnet oresistance curve of each cell independently without the need of a transist or or a diode. Both simulation and experiments showed that this method is u seful in the readout operation of the tunnel junction magnetic random acces s memory as well as in the characterization of its individual cells. (C) 20 01 American Institute of Physics.