Control of domain structure of epitaxial PbZr0.2Ti0.8O3 thin films grown on vicinal (001) SrTiO3 substrates

Citation
V. Nagarajan et al., Control of domain structure of epitaxial PbZr0.2Ti0.8O3 thin films grown on vicinal (001) SrTiO3 substrates, APPL PHYS L, 79(17), 2001, pp. 2805-2807
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
17
Year of publication
2001
Pages
2805 - 2807
Database
ISI
SICI code
0003-6951(20011022)79:17<2805:CODSOE>2.0.ZU;2-C
Abstract
We have investigated the polydomain formation in 100-200-nm-thick PbZr0.2Ti 0.8O3 epitaxial thin films on vicinally cut (100) oriented SrTiO3 substrate s. Our results show that there is a preferential location of the nucleation of the a domains along the step edges of the underlying substrate. By piez o-response microscopy, we show that all a domains have their polarization a ligned along the same direction. This result is in contrast to flat substra tes where fourfold symmetry of a domains is observed. We observe that the c ritical thickness for a domain formation is much lower than that for PbZr0. 2Ti0.8O3 films grown on flat substrates. We have developed a model based on minimization of elastic energy to describe the effect of localized stresse s at step edges on the formation of a domains in the ferroelectric layer. ( C) 2001 American Institute of Physics.