Rd. Ramsier et al., Nanolithography of silicon: An approach for investigating tip-surface interactions during writing, APPL PHYS L, 79(17), 2001, pp. 2820-2822
We report an approach for monitoring tip-surface interactions. The approach
is based on power spectrum analysis of atomic force microscope (AFM) tip o
scillations during scanning probe nanolithography on Si surfaces. A single
mode harmonic oscillator model allows us to determine the main characterist
ics of the AFM tip-surface interaction: the amplitude of oscillation, the r
esonant frequency, and the damping factor, during the writing process. We m
easure these quantities in scanning probe anodization versus the bias volta
ge. By fixing the length of lithographically patterned lines, and the energ
y deposited into each line, we search for trends which may reveal the major
factors controlling the quality of AFM-written nanostructures. Our data ar
e consistent with the concepts that a water meniscus and electrostatic tip-
surface interactions dominate contact AFM lithography. (C) 2001 American In
stitute of Physics.