Nanolithography of silicon: An approach for investigating tip-surface interactions during writing

Citation
Rd. Ramsier et al., Nanolithography of silicon: An approach for investigating tip-surface interactions during writing, APPL PHYS L, 79(17), 2001, pp. 2820-2822
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
17
Year of publication
2001
Pages
2820 - 2822
Database
ISI
SICI code
0003-6951(20011022)79:17<2820:NOSAAF>2.0.ZU;2-D
Abstract
We report an approach for monitoring tip-surface interactions. The approach is based on power spectrum analysis of atomic force microscope (AFM) tip o scillations during scanning probe nanolithography on Si surfaces. A single mode harmonic oscillator model allows us to determine the main characterist ics of the AFM tip-surface interaction: the amplitude of oscillation, the r esonant frequency, and the damping factor, during the writing process. We m easure these quantities in scanning probe anodization versus the bias volta ge. By fixing the length of lithographically patterned lines, and the energ y deposited into each line, we search for trends which may reveal the major factors controlling the quality of AFM-written nanostructures. Our data ar e consistent with the concepts that a water meniscus and electrostatic tip- surface interactions dominate contact AFM lithography. (C) 2001 American In stitute of Physics.