N-side illuminated microcrystalline silicon solar cells

Citation
A. Gross et al., N-side illuminated microcrystalline silicon solar cells, APPL PHYS L, 79(17), 2001, pp. 2841-2843
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
17
Year of publication
2001
Pages
2841 - 2843
Database
ISI
SICI code
0003-6951(20011022)79:17<2841:NIMSSC>2.0.ZU;2-4
Abstract
Thin-film microcrystalline silicon solar cells illuminated through the n la yer were studied and compared with classical p-layer illuminated cells. To investigate the corresponding charge carrier extraction properties, variati on of the intrinsic absorber layer thickness was carried out. It was found that the J-V characteristic and the quantum efficiency of the n- and p-side illuminated cells are almost identical in the thickness range investigated , up to 7 mum. No differences in the collection of photogenerated electrons or holes are observed. Hence, the illumination side of muc-Si:H single jun ction solar cells of conventional thickness may be randomly chosen without adverse effect on their performance. (C) 2001 American Institute of Physics .