Thin-film microcrystalline silicon solar cells illuminated through the n la
yer were studied and compared with classical p-layer illuminated cells. To
investigate the corresponding charge carrier extraction properties, variati
on of the intrinsic absorber layer thickness was carried out. It was found
that the J-V characteristic and the quantum efficiency of the n- and p-side
illuminated cells are almost identical in the thickness range investigated
, up to 7 mum. No differences in the collection of photogenerated electrons
or holes are observed. Hence, the illumination side of muc-Si:H single jun
ction solar cells of conventional thickness may be randomly chosen without
adverse effect on their performance. (C) 2001 American Institute of Physics
.