Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy (vol 79, pg 1094, 2001)

Authors
Li, W Pessa, M Ahlgren, T Dekker, J
Citation
W. Li et al., Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy (vol 79, pg 1094, 2001), APPL PHYS L, 79(17), 2001, pp. 2850-2850
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
17
Year of publication
2001
Pages
2850 - 2850
Database
ISI
SICI code
0003-6951(20011022)79:17<2850:OOILEA>2.0.ZU;2-S