A dual-wavelength indium gallium nitride quantum well light emitting diode

Citation
I. Ozden et al., A dual-wavelength indium gallium nitride quantum well light emitting diode, APPL PHYS L, 79(16), 2001, pp. 2532-2534
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
16
Year of publication
2001
Pages
2532 - 2534
Database
ISI
SICI code
0003-6951(20011015)79:16<2532:ADIGNQ>2.0.ZU;2-Z
Abstract
We have designed and implemented a monolithic, dual-wavelength blue/green l ight emitting diode (LED) consisting of two active indium gallium nitride/g allium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p(++)/n(++) InGaN /GaN tunnel junction is inserted between the LEDs, emitting in this proof-o f-concept device at 470 nm and 535 nm, respectively. The device has been op erated as a three-terminal device with independent electrical control of ea ch LEDs to a nanosecond time scale. (C) 2001 American Institute of Physics.