A dual-wavelength indium gallium nitride quantum well light emitting diode

We have designed and implemented a monolithic, dual-wavelength blue/green l ight emitting diode (LED) consisting of two active indium gallium nitride/g allium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p(++)/n(++) InGaN /GaN tunnel junction is inserted between the LEDs, emitting in this proof-o f-concept device at 470 nm and 535 nm, respectively. The device has been op erated as a three-terminal device with independent electrical control of ea ch LEDs to a nanosecond time scale. (C) 2001 American Institute of Physics.