High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells

Authors
Bissiri, M Gaspari, V Polimeni, A von Hogersthal, GBH Capizzi, M Frova, A Fischer, M Reinhardt, M Forchel, A
Citation
M. Bissiri et al., High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells, APPL PHYS L, 79(16), 2001, pp. 2585-2587
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
16
Year of publication
2001
Pages
2585 - 2587
Database
ISI
SICI code
0003-6951(20011015)79:16<2585:HTPEAT>2.0.ZU;2-2
Abstract
The temperature dependence of the photoluminescence (PL) efficiency of (InG a)(AsN)/GaAs single quantum wells (QWs) has been studied from 10 to 500 K. The PL intensity of N-containing samples is almost constant from room tempe rature to 500 K, in contrast to what is observed in (InGa)As QWs grown unde r the same conditions. This thermal stability increases for an increase in nitrogen content. We discuss these effects in terms of strain compensation at high nitrogen concentrations. (C) 2001 American Institute of Physics.