A reduced approach for modeling the influence of nanoclusters and {113} defects on transient enhanced diffusion

To simulate transient enhanced diffusion (TED) of dopants after ion implant ation, a very accurate model for the interaction of self-interstitials with extended defects is indispensable. Recently, such a model has been publish ed by Cowern including the formation of {113} defects via small self-inters titial clusters. Extracted from experimental results, this continuum model consists of a large set of coupled differential equations and, consequently , simulation times are rather high. In this letter, we present a model base d on only seven differential equations leading to almost identical results in comparison to those of the original model. The reduction obtained will a llow the application of the clustering model for the simulation of TED in c ommercial software tools. (C) 2001 American Institute of Physics.