The structure of the interfaces of a 10-nm-thick InxGa1-xAs quantum well bu
ried in the semiconductor GaAs matrix has been studied by the method of dou
ble-crystal X-ray diffractometry. It has been shown that, in comparison wit
h the well-known photoluminescence method, the X-ray diffraction method has
considerable advantages in characterization of multilayer systems. The det
ailed analysis of the rocking curves provided the reconstruction of the pro
files of indium distributions in quantum wells for specimens with different
indium concentrations. (C) 2001 MAIK "Nauka/Interperiodica".