Structure of the interfaces of the InxGa1-xAs quantum well from X-ray diffraction data

Authors
Afanas'ev, AM Chuev, MA Imamov, RM Lomov, AA
Citation
Am. Afanas'Ev et al., Structure of the interfaces of the InxGa1-xAs quantum well from X-ray diffraction data, CRYSTALLO R, 46(5), 2001, pp. 707-716
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTALLOGRAPHY REPORTS
ISSN journal
10637745 → ACNP
Volume
46
Issue
5
Year of publication
2001
Pages
707 - 716
Database
ISI
SICI code
1063-7745(200109/10)46:5<707:SOTIOT>2.0.ZU;2-J
Abstract
The structure of the interfaces of a 10-nm-thick InxGa1-xAs quantum well bu ried in the semiconductor GaAs matrix has been studied by the method of dou ble-crystal X-ray diffractometry. It has been shown that, in comparison wit h the well-known photoluminescence method, the X-ray diffraction method has considerable advantages in characterization of multilayer systems. The det ailed analysis of the rocking curves provided the reconstruction of the pro files of indium distributions in quantum wells for specimens with different indium concentrations. (C) 2001 MAIK "Nauka/Interperiodica".