Hot filament chemical vapor deposition of polyoxymethylene as a sacrificial layer for fabricating air gaps

A method for synthesizing polyoxymethylene (POM) film at high deposition ra tes was achieved via hot filament chemical vapor deposition (HFCVD). Nuclea r magnetic resonance spectra show that the structure of the polymer is line ar, rather than cross-linked (which plasma enhanced CVD would have produced ). The linear structure is responsible for its ease of decomposition at les s than 300 degreesC and leaving behind negligible residue. Thus, the HFCVD POM film is proposed as a novel sacrificial layer for fabricating air gaps, as it could offer the advantages of shorter removal time, decreased heat l oad, and ease of process integration over conventional methods and material s. (C) 2001 The Electrochemical Society.