Abnormal junction profile of submicrometer complementary metal oxide semiconductor devices with Co silicidation and shallow trench isolation processes

Transmission electron microscopy (TEM) combined with selective chemical etc hing has been performed to investigate the leakage mechanism in n-type meta l oxide semiconductors (nMOS) fabricated using Co silicidation and shallow trench isolation processes. TEM and TSUPREM-4 simulated results show that d opant profiles bend upward near the interface between the active region and the field oxide. Based on the TEM and simulation results, it is suggested that a shallower junction formed near the active edge could serve as a sour ce for leakage current in the nMOS. (C) 2001 The Electrochemical Society.