Effects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drains

Authors
Tseng, CH Lin, CW Chang, TK Cheng, HC Chin, A
Citation
Ch. Tseng et al., Effects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drains, EL SOLID ST, 4(11), 2001, pp. G94-G97
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
4
Issue
11
Year of publication
2001
Pages
G94 - G97
Database
ISI
SICI code
1099-0062(200111)4:11<G94:EOELDA>2.0.ZU;2-O
Abstract
Excimer laser annealing has been utilized to manufacture low temperature po lycrystalline silicon thin-film transistors with lightly doped drain (LDD) structures. The excimer laser annealing can effectively reduce the thermal budget of source/drain dopant activation, namely, without substrate heating . With the advantages of LDD structure, high performance device characteris tics with a low "off" state current of 4.38 x 10(-12) A/mum, high on/off cu rrent ratio of 1.6 x 10(7). and good field-effect mobility of 268 cm(2)/V s . can be achieved simultaneously. (C) 2001 The Electrochemical Society.