Effects of growth kinetics and surface emissivity on chemical vapor deposition of silicon in a lamp-heated single-wafer reactor

Chemical vapor deposition of Si in a lamp-heated single-wafer reactor is st udied by monitoring the growth rate of films deposited on bare S. silicon-o n-insulator (SOI), and oxidized Si wafers. The growth rate is consistently higher for deposition of polycrystalline Si than for epitaxy of Si. due to different kinetics dictating the two depositions. Epitaxy of Si on SOI show s a higher overall growth rate than on hare Si. Likewise, deposition of pol ycrystalline Si on oxidized Si wafer with a 4000 Angstrom thick oxide has a higher growth rate than on that with 15 Angstrom oxide. These are attribut ed to surface emissivity variation during Si deposition. The difference in kinetics plays a more dominant role than the surface emissivity variation i n affecting the growth rate for the depositions studied. (C) 2001 The Elect rochemical Society.