High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers

Authors
Knigge, A Zorn, M Wenzel, H Weyers, M Trankle, G
Citation
A. Knigge et al., High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers, ELECTR LETT, 37(20), 2001, pp. 1222-1223
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
20
Year of publication
2001
Pages
1222 - 1223
Database
ISI
SICI code
0013-5194(20010927)37:20<1222:HEA6NV>2.0.ZU;2-D
Abstract
Record high continuous-wave output power of 3.1 mW and peak wall-plug effic iency of 14% at the wavelength of 650 nm have been achieved from oxide-conf ined AlGAInP/AlGaAs vertical-cavity surface-emitting lasers. At a wavelengt h of 657 nm laser emission is detected up to 60 degreesC.