High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance

Authors
Kim, W Lee, KH Chung, MC Kang, JC Kim, B
Citation
W. Kim et al., High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance, ELECTR LETT, 37(20), 2001, pp. 1259-1261
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
20
Year of publication
2001
Pages
1259 - 1261
Database
ISI
SICI code
0013-5194(20010927)37:20<1259:HAHWRB>2.0.ZU;2-H
Abstract
A new layout for high-speed AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The layout is horseshoe shaped and designed to simulta neously reduce base resistance (R-B) and base-collector capacitance (C-BC). A horseshoe-shaped HBT and a conventional single-finger HBT with the same emitter, width of 2 mum were fabricated and tested. The reduction of R-B an d C-BC using the horseshoe-shaped HBT resulted in a 25% improvement of the maximum oscillation frequency (f(max) = 130 GHz).