Inductively-loaded half-bridge inverter characterisation of 4H-SiC merged PiN/Schottky diodes up to 230A and 250 degrees C

4H-SiC merged PiN/Schottky diodes were characterised in an inductively-load ed half-bridge inverter circuit at high current and high temperatures (high -T) for the first time. Results show that the replacement of Si freewheelin g diodes by SiC diodes results in far less storage charges in the freewheel ing diodes and substantial reduction in diode turn-off energy loss, especia lly at high-T.