Circuits operating in the terahertz frequency range have traditionally been
developed using hollow metal waveguides, which, due to the small wavelengt
h at these operating frequencies, must be correspondingly small in cross se
ction. As a result of the high cost of conventional precision machining of
such small waveguides, alternate fabrication methods continue to be explore
d. Silicon micromachining has been suggested as a potential means to produc
e waveguides in a more cost-effective manner for operation at these frequen
cies. This paper presents a transition structure that couples the popular f
inite ground coplanar transmission line to a W-band silicon micromachined w
aveguide, forming a fully micromachined module. The waveguide is formed via
bulk micromachining using a wet etchant, resulting in a diamond cross sect
ion. The consequences of utilizing a diamond waveguide in place of the more
common rectangular waveguide are considered and potential means of develop
ing rectangular-walled waveguides in silicon are noted. A K a-band microwav
e model of a similar transition to a conventional rectangular waveguide is
also demonstrated.