Av. Dvurechenskii et al., Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si, JETP LETTER, 74(5), 2001, pp. 267-269
Size distribution of Ge islands formed in the course of Ge heteroepitaxy on
Si(111) was studied by scanning tunneling microscopy in experiments of two
types: (i) conventional molecular beam epitaxy (MBE) and (ii) pulsed (0.5
s) irradiation with Ge ions of energy similar or equal to 200 eV at instant
s of time corresponding to a filling degree > 0.5 for each monolayer. Exper
iments were performed at a temperature of 350 degreesC. The pulsed ion-beam
irradiation during heteroepitaxy leads to a decrease in the average size o
f Ge islands, an increase in their concentration, and a decrease in the roo
t-mean-square deviation from the mean, as compared to the analogous values
in conventional MBE experiments. (C) 2001 MAIK "Nauka/Interperiodica".