Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipol ar transistor structure using polarized photoreflectance (PR) spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110 ] and [1 (1) over bar0]} dependence of the PR signals from the emitter regi on. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz-Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be ab out 25 kV/cm smaller than the theoretical value that does not take into acc ount the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the bas e region. (C) 2001 American Institute of Physics.