Dielectric and electromechanical properties of ferroelectric-relaxor 0.9 Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films

Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared f rom alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coatin g. Dielectric, electrostrictive, and piezoelectric properties of the films were characterized in detail. Films show relaxor-like behavior, but with di electric permittivity which is low (around 4300 at peak and at 340 Hz with E-ac=1.6x10(6) V/m) compared to bulk ceramics and single crystals. Several parameters which might be responsible for this lower permittivity are sugge sted. The ac and dc field dependences of the dielectric response have been investigated. Electrostrictive coefficients, M-11(7.76x10(-18) m(2)/V-2) an d Q(11)(1.9x10(-2) m(4) C-2), were determined by measuring strain and polar ization as a function of the electric field (E-ac). The maximum field induc ed piezoelectric d(33) coefficient is 100 pm/V and electrostrictive strains up to 1.2x10(-3) (with an ac electric field of 140 kV/cm) were measured. ( C) 2001 American Institute of Physics.