Electrical effects of plasma enhanced chemical vapor deposition of SiNx onGaAs Schottky rectifiers

The diode ideality factor, reverse breakdown voltage, and forward current c haracteristic were used to measure the effect on electric performance of Ga As rectifiers deposited with thin films of SiNx. Over a broad range of depo sition conditions there were minimal changes (< 10%) in breakdown voltage a nd the cause was hydrogen passivation of Si dopants in the GaAs. Ion-induce d damage did not appear to play a significant role in the results. The idea lity factors and forward leakage currents were essentially unchanged by the SiNx deposition indicating that the plasma exposure did not create defects states around the periphery of the Schottky contact. (C) 2001 American Ins titute of Physics.