Stopping cross sections for 0.3-2.5 MeV protons in GaN and InP

The stopping cross sections of the III-V semiconductor materials GaN and In P for 0.3-2.5 MeV H-1 have been studied by the Rutherford backscattering te chnique. The data are given with an estimated uncertainty better than 2% an d the agreement with earlier data existing for InP below 500 keV is good. A commonly used model ZBL-85 predicts the data correctly at the high energy end of our energy interval, but overestimates the stopping values by 7% and 4% for GaN and InP, respectively, at the lower energies. (C) 2001 American Institute of Physics.