The Cs2O overlayers with different thickness were prepared by simultaneous
oxygen-cesium adsorption on Si(111) at room temperature. Photoelectron spec
troscopy and work-function measurements have been used to study the Cs2O/Si
surfaces as a function of annealing temperature. The results show that the
interaction of the Cs2O overlayer with the substrate is weak. The Cs2O spe
cies is sensitive to x-ray radiation, forming a new species on the top surf
ace. The Cs2O/Si surfaces exhibit a negative electron affinity with a work-
function value of 0.85 +/- 0.1 eV until the Cs2O species decomposes complet
ely. After Cs2O disappears, both Cs-O and Si-O bonds are dominant on the su
rfaces with a work function of about 1.2 eV. For further annealing, the oxy
gen bonded to cesium gradually transfers to Si due to Cs desorption. The th
ickness of the SiO2 overlayer formed after Cs desorption is dependent on th
e mount of oxygen in the Cs2O overlayer. (C) 2001 American Institute of Phy
sics.