Tuning the hopping conductivity of WO3 films by ion bombardment at different temperatures

WO3 films, either prepared by sputtering or evaporation under high or ultra high vacuum conditions, were irradiated with He+ and Ar+ ions (energy range 300-350 keV) at ambient and low temperatures (77-100 K). The resulting ion induced changes of the optical absorption as well as of the electrical con ductivity could be determined on one and the same sample, which enables the variable range hopping (VRH) model to be tested under the assumption that the density of irradiation induced color centers is proportional to the ele ctronic density of states contributing to the hopping conductivity. It is f ound that the data obtained at 300 K for He+ and Ar+ bombardment can be des cribed within the VRH model by one common conductivity versus absorption cu rve, even though the effectiveness per projectile of the heavier ion for co loration as well as for increasing the conductivity is much higher. This is different at low temperatures. While the ion induced coloration is practic ally independent of the irradiation temperature for both projectiles, the e ffectiveness per projectile to enhance the conductivity is interchanged. Th is is attributed to the additional damage produced by the heavier ion at lo w temperatures resulting in strongly impeded hopping processes. Consistent with the VRH model, the temperature dependence of the conductivity of ion b ombarded WO3 films follow the Mott "T--1/4,T-,T- law, if the ion induced co nductivity is not too high. For very high ion fluences clear deviations fro m the VRH model are observed for the conductivity versus absorption curves accompanied by a shift of the above power laws from T-1/4 towards T-1/2. (C ) 2001 American Institute of Physics.