Tunnel magnetoresistance and magnetic ordering in ion-beam sputtered Co80Fe20/Al2O3 discontinuous multilayers

Discontinuous multilayered Co80Fe20(t)/Al2O3(30 Angstrom) thin films have b een prepared by ion-beam sputtering. We report on structural, magnetic, and transport (for current in plane geometry) results obtained in this system. With growing nominal thickness t of the metal layers, which effectively ch aracterizes the granular structure, a transition from tunnel to metallic co nductance is observed, indicating the onset of infinite conducting paths at t> 18 Angstrom. At t< 18 <Angstrom>, that is within the range of tunnel re gime, a different characteristic value t> 13 Angstrom was detected from the magnetization data which display here a transition from superparamagnetic to ferromagnetic behavior. The measurements of tunnel magnetoresistance (MR ) show that a sharp maximum of MR sensitivity to field takes place at this thickness, reaching similar to 24%/kOe at room temperature. At least, MR it self as a function of t has a break at the same value. All these features s uggest that Some specific kind of percolation with respect to magnetic orde r occurs in our system when the disordered granular structure is still well separated, as confirmed by the data of high resolution transmission electr on microscopy. Hence such magnetic percolation is clearly distinct from usu al electrical percolation in these discontinuous layers. At the same time, the highest MR (similar to6.5% at room temperature) in this series is attai ned with decreasing t only at t = 10 Angstrom. (C) 2001 American Institute of Physics.