Room temperature aging behavior of thermally imprinted Pt/SrBi2Ta2O9/Pt ferroelectric thin film capacitors

Metalorganic-decomposition-derived SrBi2Ta2O9 (SBT) ferroelectric thin film s, sandwiched between Pt electrodes, were imprinted by heat treatment at 13 0 degreesC in air. The aging behavior at room temperature of these imprinte d SBT capacitors was observed. The voltage shifts of imprinted P-V hysteres is loops increased with the increase of aging time, which indicated the str engthening of the internal bias created by the thermal treatment. With the strengthening of the internal bias, asymmetry of data loss was observed to increase with increasing aging time. The mechanism of the internal bias str engthening, the resultant asymmetric data loss and possible function failur e due to this aging behavior were briefly discussed. (C) 2001 American Inst itute of Physics.