Hk. Cho et al., Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition, J CRYST GR, 233(4), 2001, pp. 667-672
Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers g
rown on sapphire substrates by metalorganic chemical vapor deposition were
studied using high-resolution X-ray diffraction (HRXRD) and transmission el
ectron microscopy. For both low SiH4 and low Cp2Mg flow rates, the full wid
th at half maximum values of rocking curve and total threading dislocation
density in Al0.13Ga0.87N layers rapidly decrease due to the increased islan
d size by surfactant effect. The origin of the broadening of HRXRD rocking
curve in Al0.13Ga0.87N layers with high SiH4 and Cp2Mg flow rates results f
rom the increase of total threading dislocation density and stacking fault
density, respectively. Beside, it was observed that while for Si doping the
lattice constant c is decreased continuously with the SiH4 flow rate, the
lattice constant c of Mg doped AlGaN layers is rapidly increased with a Cp2
Mg flow rate of 3.172 mu mol/min. (C) 2001 Elsevier Science B.V. All rights
reserved.