PZT thin film bi-layer devices for phase controlled actuation in MEMS

Citation
Dfl. Jenkins et al., PZT thin film bi-layer devices for phase controlled actuation in MEMS, J ELECTROCE, 7(1), 2001, pp. 5-11
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTROCERAMICS
ISSN journal
13853449 → ACNP
Volume
7
Issue
1
Year of publication
2001
Pages
5 - 11
Database
ISI
SICI code
1385-3449(200110)7:1<5:PTFBDF>2.0.ZU;2-4
Abstract
A potential application for ferroelectric thin films is micro positioning a nd actuation. For using PZT films as micro-actuators it is desirable to hav e film thicknesses of comparable size to the underlying structure. The amou nt of actuation possible is determined by a number of factors: the piezoele ctric coefficient d(3)1, geometric factors and the compliance of both the a ctuator and cantilever and the electric field across the film. Using a bi-l ayer should therefore increase the amount of actuation for a given drive vo ltage. Bi-layer devices can also be driven at constant voltage, and their a ctuation varied by the phase difference of the drive voltage between the tw o layers. PZT films of thickness 0.5 mum have been deposited as a bi-layer. Micro-actuators have been fabricated using these structures, their electri c properties measured and their electro-mechanical properties characterised and evaluated using optical beam deflection.