Preparation of nanocomposites of polyaniline and inorganic semiconductors

Citation
Dy. Godovsky et al., Preparation of nanocomposites of polyaniline and inorganic semiconductors, J MAT CHEM, 11(10), 2001, pp. 2465-2469
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
09599428 → ACNP
Volume
11
Issue
10
Year of publication
2001
Pages
2465 - 2469
Database
ISI
SICI code
0959-9428(2001)11:10<2465:PONOPA>2.0.ZU;2-2
Abstract
Nanocomposites of polyaniline (PANI) and the semiconducting metal sulfides CdS and Cu2S were prepared from the respective metal trifluoromethanesulfon ates co-dissolved in N-methylpyrrolidone. Metal sulfide particles with typi cal diameters of 1-2 nm formed in situ upon addition of Li2S; the nanocompo sites were subsequently isolated by co-precipitation. UV/VIS absorption spe ctra suggest that the PANI-CdS nanocomposites are stable in the air, while PANI was found to degrade in the presence of Cu2S. Appreciable photovoltaic effects were measured on multilayer devices based on Al/nanocomposite/ Cd1 -xZnxO and Al/nanocomposite/C-60/Cd1-xZnxO. In the absence of the C-60 laye r, both open circuit photovoltage (U-oc) and short circuit photocurrent (Is c) were found to increase substantially with increasing CdS content, while in the presence of a C-60 layer, more complex behavior was observed.