The performance of three types of InGaAs/InP avalanche photodiodes is inves
tigated for photon counting at 1550 nm in the temperature range of thermoel
ectric cooling. The best one yields a dark count probability of 2.8 x 10(5)
per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -
60 degreesC. The afterpulse probability and the timing jitter are also stud
ied. The results obtained are compared with those of other papers and appli
ed to the simulation of a quantum key distribution system. An error rate of
10% would be obtained after 54 km.