Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APDs

Citation
D. Stucki et al., Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APDs, J MOD OPT, 48(13), 2001, pp. 1967-1981
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
JOURNAL OF MODERN OPTICS
ISSN journal
09500340 → ACNP
Volume
48
Issue
13
Year of publication
2001
Pages
1967 - 1981
Database
ISI
SICI code
0950-0340(200111)48:13<1967:PCFQKD>2.0.ZU;2-N
Abstract
The performance of three types of InGaAs/InP avalanche photodiodes is inves tigated for photon counting at 1550 nm in the temperature range of thermoel ectric cooling. The best one yields a dark count probability of 2.8 x 10(5) per gate (2.4 ns) at a detection efficiency of 10% and a temperature of - 60 degreesC. The afterpulse probability and the timing jitter are also stud ied. The results obtained are compared with those of other papers and appli ed to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 km.