Recent experiments on magnetic tunnelling devices based on magnetite film s
how an unexpectedly low tunnel magnetoresistance despite a high magnetic tr
ansition temperature and a high spin polarization of the conduction electro
ns. The, explanation is given in two parts. The first reason for the reduct
ion is the quantum mechanical coupling and relaxation of the conduction ele
ctron and core spin. This can reduce the tunnel magnetoresistance substanti
ally. The second is the surface effects in which the magnetic spins at the
surface are frustrated as a result of fewer nearest neighbours, surface rec
onstructions, antiphase boundaries and the superparamagnetic behaviour. Thi
s explains the rapid fall of the magnetization and the tunnel magnetoresist
ance with temperature.