Polarization and electrochemical impedance spectroscopy of p-type 6H-SiC el
ectrodes in an aqueous hydrofluoric acid solution is performed during the f
ormation of porous SiC. The polarization of p-type SiC permits the identifi
cation of the flatband voltage, a Tafel-like region, and a limiting current
which is attributed to the onset of the electropolishing regime. For some
of the potential range studied over which porous layers form, the impedance
data are characterized by a single high-frequency semicircle and there is
a second low-frequency semicircle at intermediate potentials. The dependenc
e of the fitted capacitance and resistance on the applied voltage suggests
that the SiC-electrolyte interface is controlled under different regimes of
potential by the space-charge layer, the interaction with surface states,
and the formation of a passivating film. (C) 2001 The Electrochemical Socie
ty.