Effects of pattern density and pitch on interaction distance and shallow trench isolation chemical mechanical polishing

Directly measured interaction distance (or planarization length) from a ste p density test mask was constant independent of pattern variables such as p attern density and pattern shapes between line and area. Then, using chemic al mechanical polishing (CMP) test mask and taking the experimentally obtai ned interaction distance into consideration, systematic exploration regardi ng density and pitch effects on the remaining nitride thickness in shallow trench isolation CMP was performed, comparing plasma enhanced tetraethyl or thosilicate and high density plasma oxide. (C) 2001 The Electrochemical Soc iety.