Hydrogenated amorphous carbon (a-C:H) films were prepared by using electron
cyclotron resonance plasma-enhanced chemical-vapor deposition (ECR-PECVD)
and various values of the ECR plasma source power, the methane gas flow rat
e, the deposition time, and the substrate bias voltage. The characteristics
of the atomic bonding structure between carbon and hydrogen in the films w
ere analyzed using Fourier transform infrared (FTIR) spectroscopy, From an
analysis of the IR absorption peaks which appeared in the range of 2800 sim
ilar to 3000 cm(-1), it was found that the bonding structure between C and
H in a-C:H films consisted mostly of sp(3) with Some sp(2), bonding. The fo
rm of the carbon-to-hydrogen bond in the films changed from CH3 to CH2 or C
H as the deposition time increased. The effect of substrate bias voltage du
ring fabrication of a-C:H films indicated that the number of carbon-tu-hydr
ogen bonds in the film decreased with increasing bias voltage because of en
ergetic bombardment of the surface by ions.