Copper-doped vanadium oxide (CuxV2O5) thin film cathode materials for a thi
n film microbattery have been prepared by DC reactive magnetron co-sputteri
ng with O-2/Ar ratio of 10/90 and compared with pure V2O5 thin film. The fi
lm structures have been characterized by x-ray diffraction analysis, transm
ission electron microscopy, Auger electron spectroscopy and X-ray photoelec
tron spectroscopy, X-ray diffraction and TEM studies show that the CuxV2O5
film was amorphous and phenomenal behavior of copper present in thin film w
ith substrate has been explained by thermodynamical model. Copper doping he
lps to increase the thickness of the film more than 1 micrometer resulting
increase of total capacity. Cycling behavior of the CuxV2O5/Lipon/Li config
uration cell system was beyond 500 cycles with average capacity of 50 mu Ah
/cm(2)-mum, which is higher than the pure V2O5 thin film system.