BaTiO3 as an insulating layer for InP-based metal-insulator-semiconductor structures

Barium titanate (BaTiO3) films were successfully deposited on InP substrate s using sol-gel process. The composition of the film has been analysed usin g X-ray photoelectron spectroscopy (XPS) and the formation of BaTiO3 has be en confirmed. Capacitance-voltage (C-V) measurements were carried out on th e fabricated Au/BaTiO3/InP MIS structures. The surface state density (N-SS) values were calculated from the C-V measurements using Terman's analysis a nd the minimum N-SS value calculated is 7 x 10(10) cm(-2) eV(-1). Deep-leve l transient spectroscopic (DLTS) measurements have also been carried out on the fabricated MIS structures to find out the traps at the interface. Only one interface state trap is observed at 0.55 eV for Au/BaTiO3/InP MIS stru ctures. (C) 2001 Elsevier Science B.V. All rights reserved.