In this article, a theoretical analysis of the behavior of metallic materia
ls at high temperature in the presence of gaseous oxygen is presented. A ge
neralized Wagner approach is presented in the limiting scenario of highly r
eactive vapors, Wagner's theory being the lower limit for null reactivity.
Oxygen transfer from the gas phase to the condensed phase is expressed in t
erms of oxygen effective pressure, accounting for the contribution of volat
ile oxides. The theoretical approach allows the prediction of the oxygen pa
rtial pressures in the feed gas corresponding to oxidation/deoxidation cond
itions. Such conditions can be different from those given by thermodynamic
equilibrium by several orders of magnitude. Moreover, the actual oxygen par
tial pressure at the condensed phase interface can be expressed as a functi
on of the feed-gas oxygen content, which is measurable. The theory is appli
cable for metals and nonmetallic materials, such as semiconductors, both in
solid and liquid phase. An application to the molten silicon-oxygen system
is presented.